Considering MEEF in inverse lithography technology (ILT) and source mask optimization (SMO)
2008
Mask Error Enhancement Factor (MEEF) plays an increasingly important role in the DFM and RET flow required to
continue shrinking designs in the low-k1 lithography regime. The ability to model and minimize MEEF during
lithography optimization and RET application is essential to obtain a usable process window (PW). In Inverse
Lithography Technology (ILT), MEEF can be included in the cost function as a nonlinear factor, so that the inversion
minimizes MEEF, in addition to optimizing PW and edge placement error (EPE). ILT has been shown to optimize
masks for a given source. Using ILT for contemporaneous Source and Mask co-Optimization (SMO) can provide further
benefit by balancing the complexity of mask and source. Results demonstrating the benefits of "MEEF-aware" ILT and
SMO for advanced technology nodes are presented in this paper.
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