Modeling of non-linear polysilicon resistors for analog circuit design

This paper focuses on modeling the effect of the silicide-silicon interface within a polysilicon resistor head that is typical of silicon process technologies used for precision analog circuit design. This interface introduces resistor nonlinearity over bias which can be detrimental to circuit performance, e.g. by manifesting circuit distortion. A nonlinear resistor model suitable for high-frequency circuit simulation and a methodology for obtaining model parameters are provided.