Orientation kinetics of the hexavacancies—V6 (B804) in silicon

Abstract A phenomenological kinetic equation is proposed to describe a process of a hexavacancy (V 6 ) orientation in silicon samples. The orientation kinetics of V 6 was investigated under a uniaxial compressional stress along the [111] axis of the crystal. Parameters appeared in the matrix equation of the orientation kinetics of V 6 as functions of pressure and annealing temperature were obtained and their values were estimated. In the case of the inequivalent V 6 centers, the pressure dependence of the difference in the magnitude of their binding energies was determined.