The effect of hydrogen/deuterium introduction on photoluminescence of 3C-SiC crystals

The effect of the incorporation and annealing of deuterium in 3C-SiC on its photoluminescence is reported. A 3C-SiC crystal has been implanted with 100 kev deuterium and subsequently annealed at temperatures between 1015 C and 1220 C for 1 to 5 minutes. SIMS depth profiles indicate hydrogen is strongly trapped by defects generated through ion bombardment, but a gradual damage repairing occurs during annealing. Photoluminescence was measured with 488 nm Ar laser excitation for sample temperatures from 89 K to 400 K. The PL peak wavelength of 540 nm at room temperature has shifted to 538 nm at 89 K. The peak PL intensity decreases with measurement temperature while its full width at half maximum (FWHM) exhibits an increasing trend. PL data were taken at five annealing stages. The post-implantation peak PL intensity and its integrated area increase initially with annealing temperature and time. After the final annealing at 1218 C for 2 minute, PL intensity and its integrated area exhibit a decrease in level.