Extreme ultraviolet lithographic mask defect detection system

The application relates to the field of integrated circuit lithography in semiconductors and discloses an extreme ultraviolet lithographic mask defect detection system. The system comprises an extreme ultraviolet light source, an extreme ultraviolet light transmission part, an extreme ultraviolet lithographic mask, a photon sieve and an acquisition and analysis system, wherein point light source beams emitted from the extreme ultraviolet light source are focused to the extreme ultraviolet lithographic mask through the extreme ultraviolet light transmission part; the extreme ultraviolet lithographic mask emits scattered light and illuminates the photon sieve; the photon sieve forms a dark field and transmits the dark field to the acquisition and analysis system. A Schwarzschild lens with extremely high processing difficulty, high cost and large size is replaced by the photon sieve with the characteristics of small size, easiness in processing, low cost and high resolution, and the extreme ultraviolet lithographic mask defect detection device is low in cost, small in size and high in resolution.