Optically pumped Pb1−xSnxTe lasers

Abstract Optically pumped Pb 1− x Sn x Te lasers have been operated at 4° K with output powers of 0.4 mW at 15 μm using a 1:1 mark-to-space ratio, 800 Hz CO 2 laser pump. Devices have been characterized with respect to power output and emission wavelength over the temperature range 4 to 30° K. Lasing has been achieved with material grown by vapour-phase epitaxy and liquid-phase epitaxy. The sharp interfaces and high surface quality demonstrated with liquid-phase epitaxy make it particularly suitable for development of multi-layer structures.