The investigation of structural perfection of CdxHg1−xTe/CdZnTe epitaxial layers by the Raman scattering method

The distribution and character of variations in the intensity of lattice vibrations that are induced by structural defects of various nature over the layer depth of CdxHg1−xTe/CdZnTe epitaxial structures are investigated. The results are discussed in detail. Experimental results are obtained by the Raman scattering method in a micromode over the cleaved surface of the sample formed normally to the [111] face immediately prior to measurements. Special attention is paid to the possibility of obtaining information on the presence of structural defects in the cation sublattice and tellurium precipitates in CdxHg1−xTe epitaxial layers.