Electronic structures and transport properties of BN nanodot superlattices of armchair graphene nanoribbons

The electronic and transport properties of embedded boron nitride (BN) nanodot superlattices of arm- chair graphene nanoribbons are studied by first-principles calculations. The band structure of the graphene su- perlattice strongly depends on the geometric shape and size of the BN nanodot, as well as the concentration of nanodots. The conduction bands and valence bands near the Fermi level are nearly symmetric, which is induced by electron-hole symmetry. When B and N atoms in the graphene superlattices with a triangular BN nanodot are exchanged, the valance bands and conduction bands are inverted with respect to the Fermi level due to electron- hole symmetry. In addition, the hybridization of orbitals from C and redundant B atoms or N atoms leads to a localized band appearing near the Fermi level. Our results also show a series of resonant peaks appearing in the conductance. This strongly depends on the distance of the two BN nanodots and on the shape of the BN nanodot. Controlling these parameters might allow the modulation of the electronic response of the systems. on the electronic structure transport properties of graphene su- perlattices. In this paper, we consider the BN-doped graphene super- lattices, which are essentially the graphene antidots passivated by boron and nitrogen atoms. We present the results of the elec- tronic and transport properties of BN-doped graphene super- lattices by using first-principles studies. With the presence of the BN nanodot, the electronic band structures show a wider gap structure that depends on the geometry and size of the BN nanodot, and the new supercell symmetry. In addition, a series of resonant peaks appear in the conductance. This strongly de- pends on the distance of the two BN nanodots and on the shape of the BN nanodot.