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High-threshold-voltage Normally-off Recessed MOS-gate AlGaN/ GaN HEMT with Large Gate Swing
High-threshold-voltage Normally-off Recessed MOS-gate AlGaN/ GaN HEMT with Large Gate Swing
2016
Yi Xiaoyan
Huang Yuliang
Zhang Yun
Cheng Zhe
Zhao Yongbing
Liu Zhiqiang
Li Jinmin
Zhang Lian
Wang Guohong
Keywords:
Swing
Threshold voltage
Electronic engineering
Materials science
High-electron-mobility transistor
algan gan
Optoelectronics
normally off
Correction
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