Electron beam induced structural changes in Ge-doped silica fabricated by planar-FHD and tube-deposited MCVD

The effect in depth of electron-beam irradiation has been characterized for Ge-doped planar-FHD and tube-deposited MCVD silica. Step height measurements followed by elastic calculations allowed the study of the densification depth profile. Confocal Raman spectroscopy showed the structural rearrangements in depth.