AlInAs-GaInAs HEMT for microwave and millimeter-wave applications

The status of lattice-matched high-electron-mobility transistors (HEMTs) and pseudomorphic AlInAs-GaInAs grown on In substrates is reviewed. The best lattice-matched devices with 0.1- mu m gate length had a transconductance g/sub m/=1080 mS/mm and a unity current gain cutoff frequency f/sub T/=178 GHz, whereas similar pseudomorphic HEMTs had g/sub m/=1160 mS/mm and f/sub T/=210 GHz. Single-stage V-band amplifiers demonstrated 1.3- and 1.5-dB noise figures and 9.5- and 8.0-dB associated gains for the lattice-matched and pseudomorphic HEMTs, respectively. The best performance achieved was a minimum noise figure of F/sub min/=0.8 dB with a small-signal gain of G/sub a/=8.7 dB. >