Thin film trannsistor array panel and manufacturing method thereof
2012
PURPOSE: A thin film transistor array panel and a manufacturing method thereof are provided to improve the electrical connection between a layer exposed by a contact hole and a layer formed on a protection member by forming the protection member consisting of a transparent conduction material. CONSTITUTION: A first protection layer (180x) is arranged on a thin film transistor. A second protection layer (180y) includes an organic insulating material. A third protection layer (180z) is formed on a first field generation electrode. A second field generation electrode (191) is formed on a third protection layer. A first protection member (83) and the first field generation electrode are formed on the same layer.
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