Fabrication of nano-gapped single-electron transistors for transport studies of individual single-molecule magnets

Three-terminal single-electron transistor devices utilizing Al/ Al 2 O 3 gate electrodes were developed for the study of electron transport through individual single-molecule magnets SMMs. The devices were patterned via multiple layers of optical and electron beam lithography. Electromigration induced breaking of the nanowires reliably produces 1 – 3 nm gaps between which the SMM can be situated. Conductance through a single Mn12 3-thiophenecarboxylate displays the Coulomb blockade effect with several excitations within ±40 meV. © 2007 American Institute of Physics. DOI: 10.1063/1.2671613