Effect of a quantizing magnetic field on the diffusivity-mobility ratio of the carriers in n-channel inversion layers on small gap semiconductors

In the present work, an attempt is made to derive expressions for the diffusivity-mobility ratios of the carriers in n-channel inversion layers on small-gap semiconductors under both weak and strong electric field limits in the presence of a quantizing magnetic field. It is found, taking n-channel layers on p-type InSb as examples, that the ratios show spiky oscillations with charging magnetic field, the periods of oscillations being independent of the degree of band non-parabolicity.