$\beta$ -Ga2O3 micro-flake FET SBPD with record detectivity of 3.87xl017Jones for weak light detection

High performance $\beta-\text{Ga}_{2}\mathrm{O}_{3}$ field-effect transistor (FET) solar-blind photodetectors (SBPDs) with record detectivity (D*) of $3.87\times 10^{17}$ Jones, responsivity (R) of $2.50\times 10^{4}\mathrm{A}/\mathrm{W}$ , photo-to-dark-current ratio (PDCR) of $7.87\times 10^{6}$ , and external quantum efficiency (EQE) of $1.22\times 10^{7}\%$ are reported based on mechanically exfoliated $\beta-\text{Ga}_{2}\mathrm{O}_{3}$ micro-flakes. The excellent performance of the $\beta-\text{Ga}_{2}\mathrm{O}_{3}$ detector under $\mu \mathrm{W}/\text{cm}^{2}$ level illumination makes it one of the best Ga 2 O 3 SBPDs towards weak light detection, sharp imaging, and safe communication application.