Creating Novel Transport Properties in Electric Double Layer Field Effect Transistors Based on Layered Materials

We present a study on the liquid/solid interface, which can be electrostatically doped to a high carrier density ( n ~10 14 cm -2 ) by electric-double-layer gating. Using micro-cleavage technique on the layered materials: ZrNCl and graphene, atomically flat channel surfaces can be easily prepared. Intrinsic high carrier density transport regime is accessed at the channel interface of electric double-layer field effect transistor, where novel transport properties are unveiled as the field-induced superconductivity on the ZrNCl with high transition temperature at 15 K, and accessing a high carrier density up to 2×10 14 cm -2 in graphene and its multi-layers.