Self-aligned amorphous indium-gallium-zinc-oxide thin-film transistor using a two-mask process without etching-stop layer

Amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) with back-channel-etch (BCE) structure, which can be fabricated by using only two photomasks, is presented. The process damage of back-channel can be avoided and the gate-to-source/drain capacitance of an a-IGZO TFT is significantly reduced. As a result, the more fast and low cost TFT circuits can be achieved.