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Study on dependence of passivation stress for electrical characteristics of AlGaN/GaN HEMTs by TCAD simulation
Study on dependence of passivation stress for electrical characteristics of AlGaN/GaN HEMTs by TCAD simulation
2017
Oishi Toshiyuki
Yamaguchi Yutaro
Yamanaka Koji
Keywords:
Passivation
Residual stress
Mechanical engineering
Engineering
Optoelectronics
drain current
algan gan
gate current
Correction
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