P‐2: High Mobility Zinc Oxynitride TFT for AMOLED

Both etch stopped and back channel etched structure TFTs with zinc oxynitride(ZnON) as active layer were developed, and the saturation mobility achieved 33 cm2/Vs. The ZnON TFTs show superior positive gate bias stress under dark and light illumination. Furthermore, a 5 inch WOLED panel driven by ZnON TFT was demonstrated.