InSb photodetectors with PIN and nBn designs
2013
InSb pin photodiodes and nBn photodetectors were fabricated by Molecular Beam epitaxy (MBE) on InSb
(100) n-type substrate and characterized. MBE Growth conditions were carefully studied to obtain high
quality InSb layers, exhibiting in pin photodiode design dark current density values as low as 13nA.cm -2 at
-50mV and R0A product as high as 6x10 6 WΩcm 2 at 77K. Then, a new unipolar nBn InSb/InAlSb/InSb detector structure on InSb substrate were designed in order to suppress generation-recombination dark
current. The first InSb nBn devices were fabricated and preliminary electrical characterizations are reported.
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