Temperature impact (up to 200 °C) on performance and reliability of HfO 2 -based RRAMs

This paper provides an overview of the temperature impact (up to 200 °C) on the electrical behavior of oxide-based RRAM, during forming, low-field resistance reading, SET/RESET, disturb, data retention and endurance. HfO 2 -RRAM devices (in a 1T1R configuration) integrated in an advanced 65 nm technology are studied for this aim. We show that forming operation is strongly activated in temperature (i.e. -0.5 V per hundred Celsius degree), being much less for SET and RESET voltages (i.e. 6 cycles, with optimized set of stress parameters showed no significant variation; data retention at 150 °C up to 68 days showed stable programming window, after different initial programming algorithms.