Calculation of two-dimensional maps of diffuse scattering by a real crystal with microdefects and comparison of results obtained from three-crystal diffractometry

2001 
Two-dimensional maps of x-ray diffuse scattering (DS) in a reciprocal space for a real crystal containing Coulomb deformation centres (clusters or dislocation loops) were calculated using a new dynamical theory developed for a crystalline media with homogeneously distributed defects. Such maps were calculated for both the fundamental, 400, as well as the quasi-forbidden, 200, reflections of x-rays (CuKα1 radiation) for a binary crystal (GaAs). They were also discovered experimentally in the GaAs films heavily doped with Si (up to 10 20 cm −3 ) by means of a Philips three-crystal diffractometer. The procedure for fitting calculated values of differential DS to the experimental data enabled not only the integral characteristics of the structure’s perfection (Debye–Waller static factor, LH , and coefficient of extinction of radiation due to additional energy losses on defects, µd )b ut also the average radius, ¯ r, and concentration, ¯
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