Effects of back-gate bias on switched-capacitor DC-DC converters in UTBB FD-SOI
2014
This paper explores the effects of back-gate bias on switched-capacitor (SC) DC-DC converters in 28 nm UTBB FD-SOI. By using back-gate bias to optimize the control circuitry and switches, the SC converter can operate with a peak efficiency of 72% in sleep mode (100 nW load) and 83% in active mode (100 µW load).
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