Study on laser-induced periodic structures and photovoltaic application

We have irradiated silicon with a series of femtosecond laser pulses to improve light absorption at the silicon surface. The laser treated surface namely black silicon shows excellent optical properties on mono and multicrystalline silicon wafers with a reflectivity reduction down to 3%, without crystal orientation dependence. After the laser process, the front side of samples has been boron‐implanted by Plasma Immersion Ion Implantation to create the 3D p+ junction. Improved electrical performances have also been demonstrated with a 57% increase in the photocurrent, compared to non‐texturized surface.