Low Subthreshold Swing and High Mobility Amorphous-Indium-Gallium-Zinc-Oxide Thin-Film Transistor with Thin HfO2 Gate Dielectric and Excellent Uniformity

We report high performance amorphous Indium-Gallium-Zinc-Oxide ( ${a}$ -IGZO) thin-film transis- tors (TFTs) with 10 nm atomic-layer-deposited HfO2 as the gate dielectric, achieving subthreshold swing ( SS ) of 70.2 mV/decade, high effective mobility ( $\mu _{\textit {eff}}$ ) of 55.3cm2/ $\text{V}\cdot \text{s}$ at an inversion carrier density ( $N_{\textit {inv}}$ ) of $5\times 10^{{12}}$ cm-2, and large $I_{ON}/\text{I}_{OFF}$ of >109. Furthermore, very good device-to-device uniformity has been confirmed by the statistical distribution of SS and maximum transconductance (Gm, max) measured from 20 pristine TFT devices. This ${a}$ -IGZO TFT has immense potential for the ultrafast and low power electronic devices for next-generation cost-effective emissive display, image sensing, and hardware for artificial intelligence (AI).