GaAs Fabry-Perot modulator for microwave applications
1995
A distributed bragg reflector Fabry-Perot modulator for microwave applications is considered. The device consists of a Fabry-Perot cavity formed by etching gratings on a rib waveguide with a buried GaAs guiding layer. Computer simulations based on the finite difference method were used to model the device. State-of-the-art first order gratings with a pitch of 0.20 /spl mu/m have been successfully fabricated.
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