Annealing behavior of phosphorus implanted silicon irradiated by several lasers of different wavelength

Annealing behavior of ion implanted Si substrates, after irradiation with CO2, Nd;YAG and Ruby lasers, is compared. The effect of substrate carrier concentration, damage degree and SiO2 films on Si surfaces on laser annealing behavior is clarified for each wavelength. Cracking of SiO2 films during Ruby laser irradiation is also observed and investigated.