BaTiO3 as an insulating layer for InP-based metal-insulator–semiconductor structures

Abstract Barium titanate (BaTiO 3 ) films were successfully deposited on InP substrates using sol–gel process. The composition of the film has been analysed using X-ray photoelectron spectroscopy (XPS) and the formation of BaTiO 3 has been confirmed. Capacitance–voltage ( C – V ) measurements were carried out on the fabricated Au/BaTiO 3 /InP MIS structures. The surface state density ( N SS ) values were calculated from the C – V measurements using Terman's analysis and the minimum N SS value calculated is 7×10 10 cm −2 eV −1 . Deep-level transient spectroscopic (DLTS) measurements have also been carried out on the fabricated MIS structures to find out the traps at the interface. Only one interface state trap is observed at 0.55 eV for Au/BaTiO 3 /InP MIS structures.