Multiple-level threshold switching behavior of In2Se3 confined in a nanostructured silicon substrate

We report the experimental observation of an intriguing behavior of multiple-level threshold switching of Si–In2Se3 heterojunction devices consisting of high-density arrays of sharp points of nanometer radius of curvature. Comparison with devices of similar junction area but without the sharp points shows that the multiple-level switching behavior is unique to devices with junctions consisting of sharp points.