Study on the Effect of Nitrogen-Ion Implantation in Semi-Insulating InP by Using Scanning Tunneling Microscopy

cm 2 , deformation of the atomic structures is observed. Cleaved-edge tunneling spectroscopy of the implanted samples has been carried out under dark conditions. The observed results demonstrate that two components of current are associated with the tunneling characteristics. Furthermore, the N + implantation is observed to induce extended states in the conduction band in which the tunneling of electrons occur. Our results suggest that low-energy N + implantation influences the