A Raman measurement of cation disorder in YBa2Cu3O7−x thin films

Abstract X-ray diffraction (XRD) and Raman microscopy were used to probe cation disorder within a series of epitaxial c -axis YBa 2 Cu 3 O 7− x (YBCO) thin films grown at different temperatures to give different c parameters. The Raman intensity ratio (585)/(340) is found to correlate with X-ray intensity ratio (005)/(006) (which is known to measure cation disorder). The Raman method has the following advantages compared to the X-ray method: (1) local information can be obtained with a spatial resolution of better than 1 μm and (2) changes in oxygen content do not affect the Raman method. However, as the X-ray technique gives global measurements and as Raman is a near surface technique, the two techniques are complementary. We have also shown that cation disorder is inhomogeneous across a film surface and that this increases the non-uniform strain within the material.