Controllable fabrication of CdS quantum dot-sensitized TiO_2 photoelectrode and its photoelectrical transfer properties

Cd(NO3)2,Na2S and TiO2 were used as raw materials to prepare different layers of CdS/TiO2 photoanode through continuous ion layer deposition method.Using Pt as counter electrode and CdS sensitized TiO2 as photoelectrode,quantum dot-sensitized solar cell with different layers of CdS was fabricated,and photoelectric parameters by photoelectric characters test were got.Combined with J-V curves,I-T curves and EIS curves,photoelectric characters of different layers of CdS/TiO2 photoanode were analyzed.Through SEM test,the morphology of the CdS sensitized TiO2 was researched.The results shows that the content of CdS would be effective within a certain range to improve the conductivity of photoanode,of which 15 layers of CdS/TiO2 had the highest photoelectric conversion efficiency.