Analysis of porous silicon

Abstract Porous silicon, suitable after oxidation for dielectric isolation, has been produced successfully by anodizing silicon in strong HF. The oxidized layer has been shown to have promise in device manufacture, providing high packing densities and radiation hardness. Anodizing has been carried out using both single and double cells, following the effects of current density. HF concentration and silicon resistivity. The resultant porous layers have been characterised with respect to composition and structure. The materials produced differ considerably in lattice strain, composition and reactivities. Prompt radiation analyses 19 F(p,αγ), 16 O(d,α), 12 C(d,p), are useful for monitoring the anodizing procedures and subsequent oxidation: currently, interest centres on the mechanistic information obtained. RBS analysis using α-particles gives a much lower Si response from porous than from bulk silicon. Glancing angle proton recoil analyses reveal considerable quantities of hydrogen in the porous layers. These mutually consistent findings have considerable mechanistic significance; extensive Si-H bonding occurs following a 2 equivalent Faradaic process.