Degradation in P-type Poly-Si Thin-Film Transistors under Pulse Bias Stresses

The reliability of p-type excimer laser annealing (ELA) poly-Si thin-film transistor (TFTs) under respective pulse gate and drain bias stresses is investigated in this paper. Under the bipolar gate pulse stress, the device exhibits increased on-state current and the degradation is dominated by the dynamic mechanism. Under the negative drain pulse stress, the device also exhibits increased on-state current, but the degradation is dominated by the DC mechanism. Explanations to the observed degradation phenomena are proposed.