InP/GaAsSb DHBTs for THz applications and improved extraction of their cutoff frequencies

The development of InP/GaAsSb DHBTs is reviewed and contextualized with respect to other III-V high-speed technologies. Pertinent material properties and challenges in the proper assessment of f Max are discussed. An iterative de-embedding algorithm involving no additional test structures/measurements is shown to yield the correct fMAx from unilateral gain data for both DHBTs and HEMTs.