Heat transport through propagon-phonon interaction in epitaxial amorphous-crystalline multilayers

Managing heat dissipation is a necessity for nanoscale electronic devices with high-density interfaces, but despite considerable effort, it has been difficult to establish the phonon transport physics at the interface due to a “complex” interface layer. In contrast, the amorphous/epitaxial interface is expected to have almost no “complex” interface layer due to the lack of lattice mismatch strain and less associated defects. Here, we experimentally observe the extremely-small interface thermal resistance per unit area at the interface of the amorphous-germanium sulfide/epitaxial-lead telluride superlattice (~0.8 ± 4.0 × 10‒9 m2KW−1). Ab initio lattice dynamics calculations demonstrate that high phonon transmission through this interface can be predicted, like electron transport physics, from large vibron-phonon density-of-states overlapping and phonon group velocity similarity between propagon in amorphous layer and “conventional” phonon in crystal. This indicates that controlling phonon (or vibron) density-of-states and phonon group velocity similarity can be a comprehensive guideline to manage heat conduction in nanoscale systems. Managing heat dissipation in nanoscale electronic devices and understanding the underlying mechanisms complicated due to the reduced scale at the interface between the various materials. Here, the authors detect an extremely small interface thermal resistance is in amorphous-(a-) GeS/epitaxial-(e-) PbTe superlattice and perform calculations showing that heat conduction in nanoscale systems with high density interfaces might be controlled by phonon density of states and group velocity similarities.