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W/HfO2 gate stacks with Tinv~1.2nm and low charge trapping
W/HfO2 gate stacks with Tinv~1.2nm and low charge trapping
2003
A. Callegari
P. Jamison
Byoung Hun Lee
Deborah A. Neumayer
Vijay Narayanan
Sufi Zafar
Evgeni Gousev
C. D'Emic
Dianne L. Lacey
M. Gribelyuk
Cyril Cabral
A. Steegen
Victor Ku
R. Amos
Ying Li
P. Nguyen
F. Mc. Feely
G. Singco
Jin Cai
S-H Ku
Yun-Yu Wang
Cory Wajda
David L. O'Meara
H. Shinriki
Tsuyoshi Takahashi
Keywords:
Nanotechnology
Atomic physics
Materials science
Optoelectronics
Trapping
gate stack
Correction
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