Properties of amorphous Si thin film anodes prepared by

Amorphous Si (a-Si) thin film anodes were prepared by pulsed laser deposition (PLD) at room temperature. Structures and properties of the thin films were investigated using X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM) and electrochemical measurements. Galvanostatic charge/discharge tests of half cells using lithium counter electrode were conducted at a constant current density of 100 mA/cm 2 in different voltage windows. Cyclic voltammetry (CV) was obtained between 0 and 1.5 V at various scan rates from 0.1 to 2 mV/s. The apparent diffusion coefficient (DLi) calculated from the CV measurements was about � 10 � 13 cm 2 /s. The Si thinfilmanodewas alsosuccessfully coupledwith LiCoO2thinfilmcathode. The a