Quantum-well-intermixing induced shift in material bandgap and refractive index using low-energy ion implantation
2003
We developed a semi-analytical model to analyze the induced change in optical parameters of InGaAsP/InGaAsP MQWs by phosphorus-implanted quantum well intermixing (QWI). The results match well with the experimental results and can be applied for realizing photonic integrated circuits.
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KQI