Preparing a nanowire transistor hard mask layers

A nanowire device of the present description may be prepared by integrating at least one hard mask during the production of at least one nanowire transistor, the protection of an uppermost channel nanowire from damage by manufacturing methods such. As those that are part of a replacement metal gate process and / or of the nanowire-releasing method to be supported. The use of at least one hard mask can result in obtaining a substantially undamaged uppermost channel nanowire in a nanowire transistor having a plurality of superimposed layers, whereby the uniformity of the channel nanowires and the reliability of the entire nanowire transistor having a plurality of superimposed layers can be improved.