Silicon-based integrated millimeter-wave CPW-to-dielectric image-guide transition

In this article, a novel mm-wave dielectric image-guide DIG to CPW transition is proposed, fabricated, and successfully tested in the silicon technology. A DIG is implemented on high resistivity Silicon-On-Insulator SOI wafer. The image-guide height and handle layer thickness are 500 µm and 130 µm, respectively. An Aluminum coplanar waveguide is patterned over the DIG. The measured transmission characteristics of the transition are in acceptable agreement with the simulation results. A transition coupling loss of about 1 dB has been achieved at 60 GHz. © 2014 Wiley Periodicals, Inc. Int J RF and Microwave CAE 24:490-497, 2014.