Strained and Relaxed SiGe for High-Mobility MOSFETs

In this talk, the authors first review the earlier results on high-mobility, biaxially strained Si, SiGe, and Ge channels grown on relaxed Si 1-x Ge x /Si(001) buffers. Next, they discuss their experiments with SiGe growth on Si(110) and (111), with a particular emphasis on the unique dislocation morphologies that emerge. The author will also show that the growth kinetics and dislocation behavior on (110) and (111) have significance for SiGe source/drain technology