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Improved Current Drivability and Gate Stack Integrity using Buried SiC Layer for Strained Si/SiGe Channel Devices
Improved Current Drivability and Gate Stack Integrity using Buried SiC Layer for Strained Si/SiGe Channel Devices
2007
Hui Zang
Wei Yip Loh
Hoon-Jung Oh
Kyu Jin Choi
Hoai Son Nguyen
Patrick Lo
Byung Jin Cho
Keywords:
AND gate
Electronic engineering
Materials science
Communication channel
Optoelectronics
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