Design pinciples for high-performance InP-based strained-layer quantum-well lasers

InP-based strained-layer quantum-well (SL-QW) lasers have become promising devices for various optical communication systems, such as high-speed, long-haul transmission systems and fiber-in-the-loop (FITL) systems [1]. This paper describes a fundamental analysis method for designing high-performance InP-based SL-QW lasers. We formulate basic design principles for minimizing the threshold current density by taking full advantage of the characteristic features of strain-induced changes in the valence-band structures. We also demonstrate that a more advanced numerical approach is crucial for an analysis of the high-temperature characteristics. Finally, we discuss some design rules for integrated SL-QW lasers applied in FITL systems.