An empirical model for static I–V characteristics of double gate tunneling field effect transistor

A simple empirical and analytical model for static I–V characteristic of double gate tunneling field effect transistor (TFET) is proposed. This model accounts for the drain current Id of a TFET as a function of both gate and drain biases, Vg and Vd, with only five parameters. The dependency of the model on the thickness of gate dielectric and bulk, tox and Tsi, can be easily included in the parameters. The model is compared extensively with the TCAD simulation. For a channel length Lc of 20nm, tox of 1, 2, and 3nm, and Tsi of 10 and 20nm, quantitative agreement between the model and simulation is demonstrated for Vg from ∼0.3 to 2.0V and Vd from 0 to 2.0V. The model is easily applicable to deriving analytical expressions for the other device characteristics such as transconductance, output resistance, and the fluctuation of Id induced by a size variation such as tox. The physical origin of the model is also discussed.