Reduction of V oc induced by the electron-phonon scattering in GaAs and CH 3 NH 3 PbI 3

This work highlights the intrinsic modification of the electronic density-of-states due to electron-phonon scattering. Using a quantum model we show that, by broadening the density-of-states in the bandgap, the scattering changes the absorption/emission ratio and then some photovoltaic parameters like V oc . For the high mobility GaAs material we obtain a moderate V oc reduction of 4mV. In the highly polar CH 3 NH 3 PbI 3 perovskite material, even through the mobility is low, the broadening in the density-of-states is limited by the small phonon energy and then the V oc reduction remains inferior to 41mV.