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Acemap > Paper > Fabrication of Crack-Free Metal-Semiconductor-Metal Ultraviolet Photodetectors on Si (111) Substrates Based on Novel AlN/AlGaN Buffer Multilayer Scheme

Fabrication of Crack-Free Metal-Semiconductor-Metal Ultraviolet Photodetectors on Si (111) Substrates Based on Novel AlN/AlGaN Buffer Multilayer Scheme

2007 
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