Improved photoelectrochemical water oxidation using wurtzite ZnO semiconductors synthesized through simple chemical bath reaction

Abstract In this paper we demonstrate, the drop-casting of chemically synthesized ZnO nanoparticles over ITO coated glass substrate to obtain the good-quality semiconductor thin film. UV-visible absorption spectrum of the ZnO film indicates the direct band gap energy of 3.21 eV. Scanning electron microscopy confirms the presence of small particles of ∼30 nm dimension whereas X-ray diffraction analysis indicates the presence of hexagonal wurtzite ZnO structure. Maximum photoelectrochemical water oxidation current of 440 μA cm −2 has been recorded even at a low overpotential of 0.25 V vs. Ag/AgCl reference electrode under minimum illumination of 35 mW cm −2 , when tested in 0.1 M Na 2 SO 4 solutions (pH7). The incident photon to current conversion efficiency (IPCE) and absorbed photon to current conversion efficiency (APCE) measurements reflect high photo-conversion efficiencies as 35% and 65%, respectively, when measured with the semiconductor. Photocatalytic activity of the ZnO semiconductors has been measured spectrophotometrically using aqueous Rhodamine-B solution under same Xe-light irradiation.