Pressure Collapse of Kondo Gap in Kondo Compound CeRhSb

The effect of pressure on the electrical resistivity of CeRhSb has been studied up to 80 kbar in order to elucidate the electronic Properties of CeRhSb at low temperature. It is found that the Kondo temperature increases with pressure and gap is quenched at P =80 kbar, showing a maximum around 30 kbar.