High performance WTe 2 -MoS 2 in-plane heterojunction Tunnel Field Effect Transistors

We study in-plane heterojunction tunnel field effect transistors based on monolayer transition metal dichalcogenides by means of self-consistent non-equilibrium Green's functions simulations and an atomistic tight-binding Hamiltonian. We first compare several heterojunctions before focusing on the most promising one, i.e. $\mathrm{\pmb{WTe}_{2}}{-\mathrm{\pmb{MoS}}_{2}}$ . We investigate the scalability of this device as a function of the channel length, and analyze the influence of source and drain backgate voltage. Our results show that, with an appropriate design, this device can yield extremely low sub-threshold swings and $\pmb{I}_{ON}/\pmb{I}_{OFF}$ ratios higher than $10^{7}$ at a supply voltage of 0.3V.